On Optimization of Technological Process To increase Integration Rate Of Field-Effect heterotransistors Framework A Double-Tail dynamic Comparator
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Abstract
In this paper we introduce an approach to increase integration rate of field-effect heterotransistors in the
framework of a double-tail dynamic comparator. In the framework of the approach we consider a
heterostructure with special configuration. Sev-eral specific areas of the heterostructure should be doped
by diffusion or ion implantation. Annealing of dopant and/or radiation defects should be optimized
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