On Prognosis of Changing of the Rate of Diffusion of Radiation Defects, Generated during Ion Implantation, with Increasing of Depth of their Penetration On Prognosis of Changing of the Rate of Diffusion of Radiation Defects, Generated during Ion Implantation, with Increasing of Depth of their Penetration

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E. L. Pankratov

Abstract

In this paper, we introduce a model for the redistribution and interaction of point radiation defects between themselves, as well as their simplest complexes in a material, taking into account the experimentally non-monotonicity of the distribution of the concentration of radiation defects. To take into account this nonmonotonicity, the previously used model in the literature for the analysis of spatiotemporal distributions of the concentration of radiation defects was supplemented by the concentration dependence of their diffusion coefficient.

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